Plasma-Processing of Device-Quality GaN and Other Group III-Nitride-Dielectric Interfaces for Advanced Device Applications
Abstract
The research performed under this grant was focused on two aspects of GaN-dielectric interfaces: (1) the development of remote plasma processing to yield device quality interfaces suitable for applications including metal oxide semiconductor (MOS) devices, as well surface passivation for high electron mobility transistor (HEMT) devices, and (2) determination of band offset energies between GaN and dielectrics including silicon dioxide ?SiO2), silicon nitride (Si3N4) and a representative high-k alternative dielectric, hafnium oxide (HfO2). Considerable progress was made in each of these areas, and the research has been documented in numerous publications. In particular, a low temperature (300 deg C) remote plasma processing sequence was developed which minimized interfacial traps (d(sub it)), and identified the importance of self-organized gallium suboxide, (GaO(x), x<1.5) interfacial layers. Conduction band offset energies between GaN and the representative dielectrics studied were adequate for MOS and surface passivation applications. The critical nature of the self-organized GaO(x) layer was verified by showing that interfaces with thicker layers, approx. 1.5 nm as contrasted with appro. 0.8 nm, yielded increased densities of interfacial defects, attributed to the inability balance bond and macroscopic strain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2003
- Accession Number
- ADA416299
Entities
People
- Gerald Lucovsky
Organizations
- North Carolina State University