Fabrication of AlGaN-GaN-InN High Electron Mobility Transistors
Abstract
The effect of various growth parameters such as temperature, V/III ratio and the growth rate on the properties of InN layers grown by MOCVD was investigated. The InN layers were deposited onto 2 micrometer thick GaN-on-c-plane sapphire films. In addition, the different precursor injection procedures were investigated. Since the growth of InN required very low deposition temperatures around 600 deg. C, for the deposition of InN/GaN heterostructures similar experiments were performed to optimize the growth of GaN at comparable growth temperatures. The fabrication of GaN/InN/GaN structures for device applications was complicated by intermixing and surface segregation of indium and defect formation in heterostructures related to the large lattice mismatch of 10% between GaN and InN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 2003
- Accession Number
- ADA416411
Entities
People
- Umesh Mishra
Organizations
- University of California, Santa Barbara