A Study of Mid-IR Laser Active Regions
Abstract
We investigated the formation of InAsSb three dimensional growth on GaSb substrates Experiments were conducted as a function of the As pressure and monolayer coverage. We also explored the band offsets in the Ga1-xInxSb/GaSb heterojunctions as a function of the InSb alloy concentration, x= Experiments consisted of growth of a series of strained quantum wells SQWs where the alloy concentration, x and thickness, d of the quantum wells were varied X-ray analysis was used to determine the composition and thickness and to monitor the onset of relaxation. We have grown single quantum wells of strained Ga1-xInxSb (x<0.35) embedded in GaSb by molecular beam epitaxy to investigate the photoluminescence and the band offset of this heterojunction. The photoluminescence shifts to longer wavelengths when the well thickness, or the indium content x, is increased The band offsets of these heterojunctions are estimated by fitting the photoluminescence data to a single quantum well model Our offset estimates support the theoretical prediction by first principle calculations for these strained heterojunctions.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2003
- Accession Number
- ADA416635
Entities
People
- K. J. Malloy
Organizations
- University of New Mexico