Construction of a Reactive Co-Evaporation Oxide Thin Film Deposition System

Abstract

The goal of this research program is to develop a Molecular Beam Epitaxy (MBE) system adapted to the growth and characterization of complex oxide films. The research focus is on the epitaxial growth of complex oxides, such as SrTiO3 and BaTiO3, on single crystal silicon and complex oxide substrates. This task leads to a number of requirements for this system: 10000 C substrate temperature to remove SiO2 from Si wafers in situ; angstrom per minute deposition rates to accurately synthesize unit cell buffer layers; high-resolution reflection, high-energy electron diffraction (RHEED) to characterize surface structure; and an oil-free pumping system to avoid contamination. (1 figure)

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Document Details

Document Type
Technical Report
Publication Date
Aug 28, 2003
Accession Number
ADA417449

Entities

People

  • Charles Ahn

Organizations

  • Yale University

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Contamination
  • Crystals
  • Electron Diffraction
  • Energy
  • Epitaxial Growth
  • Field Effect Transistors
  • Films
  • High Energy
  • High Resolution
  • Materials
  • Oxide Films
  • Oxides
  • Single Crystals
  • Substrates
  • Thin Films
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Software Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene