Indium Gallium Arsenide Nitride Quantum Dots for High Speed Infrared Emitters

Abstract

Report developed under SBIR contract for Topic BMDOO2-11 to investigate lnGaAsN quantum dots for application to high speed infrared emitters. The Phase I study successfully fabricated and characterized both InGaAs and InGaAsN quantum dots. Atomic force microscopy and transmission electron microscopy verified the structural properties of the dots. infrared photonic emission from these dots was achieved with samples at both 77 K and room temperature. The feasibility of using lnGaAsN quantum dots for infrared emitters has been demonstrated and continued Phase II effort is warranted.

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Document Details

Document Type
Technical Report
Publication Date
Jul 03, 2003
Accession Number
ADA417752

Entities

People

  • Aaron Moy

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Charge Carriers
  • Crystals
  • Electron Microscopy
  • Electrons
  • Emitters
  • Gallium Arsenides
  • High Resolution
  • Low Temperature
  • Materials
  • Microscopy
  • Monomolecular Films
  • Orientation (Direction)
  • Quantum Dots
  • Radio Frequency Power
  • Semiconductors
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing