Reliability Concerns for GaAs-Based HBTs in DoD Space Systems

Abstract

Gallium-arsenide-based heterojunction bipolar transistor (HBT) circuits are known to be sensitive to current gain degradation associated with aspects of the semiconductor manufacturing process. This letter discusses the susceptibility of GaAs-based HBT circuits to a life-limiting failure mechanism and the impact of this failure mode on the use of these circuits in space system applications.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 31, 2003
Accession Number
ADA418223

Entities

People

  • D. C. Mayer
  • S. R. Robertson

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Bipolar Junction Transistors
  • Degradation
  • Department Of Defense
  • Electronics
  • Engineering
  • Failure Mode And Effect Analysis
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Life Tests
  • Reliability
  • Semiconductors
  • Space Systems
  • Test Methods
  • Transistors

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Microelectronics
  • Space