Semiconductor Nanostructures on High Index Surfaces
Abstract
This report summarizes work on semiconductor quantum dot nanostructures that was carried out at the University of Virginia from July 2000 to April 2003. The key findings of the work are that: the emission and absorption properties of these nanostructures are intimately linked to the control of their size and ordering. The size of the quantum dot nanostructures was found to be more dominant in affecting the optical properties of the structures. It was determined that the dots could be ordered in the vertical direction. This ordering however, led to a reduction in the in-plane area density. Some minimal in-plane ordering could be achieved when the structures are grown on high index surfaces. The best surface for dot uniformity (without lateral ordering) was the (001) surface misoriented by 1 to 2 degrees. in this configuration, the surface can technically be represented as a high index surface. Semi-analytical calculations have been carried out to determined the energy structure of the dot nanostructures. These calculations were used in some of the experimental studies reported in the attached papers. These studies were carried out on quantum dot inter-band as well as intra-band laser and photodetector structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 2003
- Accession Number
- ADA418611
Entities
People
- Debdas Pal
- E. Towe
- Valeria-gabriela Stoleru
Organizations
- University of Virginia