Sub-1nm Patterning Accuracy via Spatial-Phase Locking

Abstract

Scanning-electron-beam lithography (SEBL) is an essential tool for creating patterns of arbitrary geometry at feature sizes below 100 nm, even down to 15 nm dimensions. Aside from the slow writing speed, the most outstanding problem of SEBL is its inability to achieve pattern-placement accuracy that is compatible with its resolution. For example, commercial SEBL systems, costing several millions of dollars, can under the most ideal conditions achieve placement accuracy of about 20 nm. To solve this problem MIT invented and has pursued a novel approach called spatial-phase locking. The objective of this grant was to demonstrate the efficacy of spatial-phase-locked e-beam lithography (SPLEBL) in achieving 1-nm level placement accuracy. SPLEBL replaces the normally open-loop approach to scanning-electron-beam lithography (SEBL) with a closed-loop approach.

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Document Details

Document Type
Technical Report
Publication Date
Dec 19, 2003
Accession Number
ADA419136

Entities

People

  • Henry I. Smith

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Closed Loop Systems
  • Compressed Sensing
  • Control Systems
  • Detectors
  • Electron Beam Lithography
  • Electron Beams
  • Electrons
  • Engineering
  • Fabrication
  • Frequency
  • Lithography
  • Measurement
  • Operating Systems
  • Scanning
  • Standards
  • Two Dimensional

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Facility/Structural Engineering.
  • Integrated Circuit Design and Technology.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene