Development of Ternary Chalcopyrite Crystals of High-Power Mid-Infrared Lasers
Abstract
This is the final technical report for a three-year project to study growth and characterization of ZnGeP2 and CdGeAs2, and related chalcopyrite crystals. In this project, we have investigated the variety of behaviors exhibited by donors and acceptors in these nonlinear optical materials. The experimental techniques used to characterize the crystals were optical absorption, visible/near-infrared/infrared photoluminescence, electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR), and Hall measurements. Our industrial partner was BAE Systems (formerly Sanders) in Nashua, NH. Specific results during this project include (1) a detailed characterization of the photoinduced optical absorption in ZnGeP2, (2) a comprehensive survey of the PL, optical absorption, EPR, and ENDOR of copper acceptors in ZnGeP2, (3) an EPR, ENDOR, and optical absorption study of nickel in AgGaSe2, (4) a correlation study between PL, EPR, and optical absorption in CdGeAs2, and (5) a study of the effects of Group VI donors (S, Se) in ZnGeP2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 09, 2003
- Accession Number
- ADA419591
Entities
People
- Larry E. Halliburton
- N. C. Giles
Organizations
- West Virginia University