Wide Band Gap Semiconductor Technology Initiative

Abstract

Investigations have been concerned with substrate etching, thin film growth and doping and the growth of pin structures coupled with structural, microstructural, thickness, optical and electrical characterizations. Maps of the FWHM of the x-ray rocking curves reveal that both the number and the degrees of tilt of the domains in the (112-0) wafers were significantly smaller than those observed for the 80 off-axis (0001) as-received wafers. The average FWHM values for the former and latter were determined to be 22.93 and 50.96 arcsec, respectively. Growth results obtained on 4H-SiC( 112-0) have shown differences with those obtained on 80 off-axis 4H-SiC(0001).

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Document Details

Document Type
Technical Report
Publication Date
Jan 07, 2004
Accession Number
ADA419730

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electron Mobility
  • Electrons
  • Films
  • High Temperature
  • Materials
  • Materials Science
  • Measurement
  • Microscopy
  • Military Research
  • Mobility
  • Silicon Carbide
  • Surface Roughness
  • Thickness
  • Thin Films
  • Vapor Deposition
  • X Rays

Fields of Study

  • Materials science

Readers

  • Geodesy
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene