Dynamics of Etching at the Gas-Surface Interface
Abstract
The primary objective of this research project is to elucidate fundamental chemical and physical processes that contribute to the etching of polymers and semiconductors in dry etching environments. This fundamental knowledge should help enable the design of novel etch processes for specialty applications where fine features with high aspect ratios are critical. The new knowledge generated by this project will not only suggest new etch processes, but it will add new understanding to the mechanisms by which materials degrade in the low-Earth orbital environment and, consequently, will (1) enable the definition of more accurate test methods for the prediction of materials durability in low-Earth orbit and (2) help guide the design of new, more durable, spacecraft materials. The pursuit of ever smaller dimensions of circuit patterns for ultralarge scale integration has placed unrelenting demands on plasma etching. Etch rate nonuniformities and peculiar etching topographies hinder the production of very fine structures. Trial-and-error development of process recipes for modern etchers has largely overcome these problems for current technologies, but new solutions are required as targeted device dimensions shrink below 200 nm. A basic understanding of the etching interactions that govern etch rate, profile evolution, and surface roughness is essential to develop the predictive capabilities required for efficient optimization of emerging etch tools and for design of a new generation of reactors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 19, 2004
- Accession Number
- ADA419872
Entities
People
- Timothy K. Minton
Organizations
- Montana State University