Solid State THz Sources
Abstract
High layer quality GaN NDR layers have been grown in house by newly setup MOCVD facility. Record quality AIN layers were grown for high thermal conductivity substrateless diodes with improved thermal management. GaN Gunn diodes were designed and fabricated on Si substrates with high thermal conductivity. Combined with the use of small size devices they allowed to bias GaN NDR diodes under electric fields suitable for oscillation. Liquid Nitrogen Characterization of GaN NDR diodes manifested clear increase of current handling as necessary for establishment of NDR conditions. Planar GaN NDR diodes have been investigated as an alternative to vertical designs. InGaN/GaN superlattice designs have been theoretically and experimentally investigated for THz signal generation. Pulse generation setups have been developed to respond to high power, nsec time needs of GaN NDR diodes. On wafer probe techniques with built-in resonators have been investigated for high frequency testing of NDR diodes. Experimental micromachining technology was developed for silicon. Waveguide, probes, transitions and flanges developed and tested in W band. Excellent experimental results were obtained in W band. Nearly finished with corresponding GaAs process technology. Technology demostration was made with complete W band multiplier.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 23, 2003
- Accession Number
- ADA419976
Entities
People
- Dimitris Pavlidis
Organizations
- University of Michigan