Atomically Smooth Epitaxial Ferroelectric (Piezoelectric) Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory
Abstract
The goal of this research program is to develop atomically smooth, nanostructured, single crystalline, epitaxial complex oxide thin films as the basic building block for a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory. Oxide materials exhibit a broad diversity of behavior: transport properties that include superconducting, metallic, semiconducting and insulating ground states; magnetic properties ranging from ferromagnetism and colossal magnetoresistance to antiferromagnetism; and dielectric properties ranging from high-k insulating behavior to ferroelectricity, piezoelectricity, and pyroelectricity. The chemical and structural similarity of perovskite oxides makes it possible to combine these various functionalities into epitaxial heterostructures. In this work, the crystallinity and surface quality of epitaxial films and the quality of the interfaces between different oxides are important factors determining device performance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 2003
- Accession Number
- ADA421305
Entities
People
- C. H. Ahn
Organizations
- Yale University