SiC MEMS For Harsh Environments
Abstract
This document is the final technical report for the SiC MEMS for Harsh Environments in-house research program jointly coordinated between AFRL/MNMF and AFRL/MLPS, and addresses the benefits of silicon carbide (SiC) as a material of choice for harsh environment applications, specifically at the scale of microelectromechanical systems (MEMS). The results from this program provide clear evidence of the benefit of SiC as a harsh environment (specifically high temperature) material for both structural and electronic devices. Although shock testing of SiC MEMS devices under this program was not accomplished, subsequent work allowed for this testing to occur, with positive results. Furthermore, one of the key concerns with respect to SiC electronics was the need for good contact metallization for ohmic contacts. Rhenium was found to be an excellent material for providing ohmic contact metallization on SiC. These results provide a good foundation for the benefits of SiC for harsh environment (high temperature and high shock) applications
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2003
- Accession Number
- ADA421390
Entities
People
- Donald R. Wiff
- Kenneth C. Bradley
- Scott L. Roberson
Organizations
- Air Force Research Laboratory