Shot Noise in Negative-Differential-Conductance Devices

Abstract

The authors have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2 eI in the NDC region, that of the latter device remained 2 eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 2003
Accession Number
ADA422261

Entities

People

  • B. Nielsen
  • E. E. Mendez
  • V. Kuznetsov
  • Woochul Song

Organizations

  • Stony Brook University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Diodes
  • Electrodes
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Free Electrons
  • Ground State
  • Heterojunctions
  • Instability
  • Low Temperature
  • Power Electronics
  • Quantum Tunneling
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Semiconductors
  • Shot Noise
  • Tunnel Diodes

Fields of Study

  • Materials science
  • Physics

Readers

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