AlGaN/InGaN Nitride Based Modulation Doped Field Effect Transistor

Abstract

The goal of the proposed work is to investigate the potential advantages of the InGaN channel as a host of the 2DEG and to address the material related problems facing this ternary alloy in the AlGaN/InGaN MODFET structure. The impact on addressing these materials issues on the AlGaN/InGaN MODFET device performance will be systematically investigated and compared with the corresponding GaN 2DEG. There are several issues that were investigated, that are related to the properties of InGaN and AlGaInN material systems. These properties are concerned with the strain and its effects on the band structure, recombination process, band offset and piezoelectric fields and 2DEG.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2003
Accession Number
ADA422632

Entities

People

  • S. M. Blair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Vapor Deposition
  • Crystal Lattices
  • Electron Microscopy
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Mass Spectrometry
  • Materials
  • Phase Separation
  • Quantum Wells
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Transistors
  • Transmission Electron Microscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Economics
  • Semiconductor Device Technology