Uncooled RF Electronics for Airborne Radar

Abstract

Improvements to the AlGaN/GaN HEMT device technology was studied at the epitaxial level by MOCVD, aimed at enhancing efficiency and linearity. A number of projects were performed under the program, including reducing the contact resistance, introducing a type of contacts that permits very short access regions, introducing hot electron launching into the channel, and double channel structures. Basic research in support of these projects was also performed, including studies of non-planar selective area growth, polarization effects in AlGaN/CaN heterostructures, and doping of GaN with Fe and oxygen.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2003
Accession Number
ADA422739

Entities

People

  • Umesh Mishra

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electrical Properties
  • Electron Mobility
  • Electronics
  • Electrons
  • Energy Bands
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Metal-Semiconductor Junctions
  • Partial Pressure
  • Polarization
  • Power Electronics
  • Resistance
  • Semiconductors
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Aerospace Test and Evaluation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics