Optical Properties of III-V Semiconductor Nanostructure and Quantum Wells

Abstract

The authors have investigated the interband and intersubband transitions in III-V semiconductor quantum wells and quantum dots. They also investigated intersubband transitions in III-nitride multiple quantum wells grown on a sapphire substrate, in particular, intersubband transitions in InGaAs/GaAs multiple quantum dots and GaN/AlGaN multiple quantum wells. Polarization effect on the phonon modes in GaN/AlGaN heterojunctions field effect transistors also were reported. The report contains detailed discussions of the results obtained during the last 18 months. It concludes with a list of related technical papers, books, and symposia. (1 table, 10 figures, 63 refs.)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2002
Accession Number
ADA423002

Entities

People

  • Omar Manasreh

Organizations

  • University of Arkansas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Chemical Vapor Deposition
  • Detectors
  • Electron Density
  • Electronics
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • Infrared Detectors
  • Materials
  • Optical Properties
  • Physical Properties
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Quantum Computing