Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide
Abstract
The purpose of this research was to search for evidence of low temperature annealing from neutron irradiated 4H-silicon carbide. No features suggesting annealing were found below a temperature of 340K. Temperature dependant Hall effect measurements were taken over a range of 100K to 340K recording resistivity, carrier densities, and mobility. Resistivity was noted to increase with irradiations, and carrier densities appeared to decrease, while mobility appeared minimally affected by neutron irradiation. This suggests the creation of active acceptor defects decreasing carrier concentrations. N-type samples measured were 5mm x 5mm square with Nickel contacts, and irradiated to 10(exp 10) and 10(exp 16) n-cm/cu cm of 1MeV equivalent neutron fluence. Suggestions for continuing research include using a probe station instead of wire connections to samples, use a large source current to minimize variance, and minimize cadmium shielding to reduce negative reactivity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2004
- Accession Number
- ADA423131
Entities
People
- Ange1o M. Bonavita
Organizations
- Air Force Institute of Technology