Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

Abstract

Vertical-cavity surface-emitting lasers (VCSEL) are the most suitable light sources for certain optoelectronic applications because of their planner nature of light emission. VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs. First a test structure was grown by the molecular-beam epitaxy (MBE) technique and was characterized by reflectance and photoluminescence techniques. We used a wet oxidation process for current confinement in the laser structure. The VCSELs have low threshold current, low voltage drop and hence are suitable for hybridization onto silicon MOS circuits.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2004
Accession Number
ADA423231

Entities

People

  • H. Hsen
  • M. T. Lara
  • N. C. Das
  • Peggy Newman
  • Wen‐Hsin Chang

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Distributed Bragg Reflectors
  • Emission
  • Epitaxial Growth
  • Fabrication
  • Films
  • Flip Chips
  • Lasers
  • Light Sources
  • Low Temperature
  • Low Voltage
  • Molecular Beam Epitaxy
  • Optoelectronic Devices
  • Oxidation
  • Reflectance
  • Surface Emitting Lasers
  • Voltage

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene