Tunneling Characteristics of an Electron-Hole Trilayer in a Parallel Magnetic Field

Abstract

We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures in which electrons- and boles accumulate in the InAs and GaSb regions respectively under a magnetic field parallel to the interlaces The low-temperature (T=4.2 K) zero-bias magnetoconductance has shown a behavior with field that evidences the two-dimensional character of both electrons and holes and that has allowed us to determine the hole density and the electron-hole separation. The observed field dependence of the current-voltage characteristics is explained by the relative change in parallel momentum of electrons and holes induced by the field.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 2003
Accession Number
ADA423249

Entities

People

  • A. G. Abanov
  • E.e. Mendez
  • Yu-Wei Lin

Organizations

  • State University of New York

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Electron Density
  • Electron Gas
  • Electron Holes
  • Electrons
  • Energy Bands
  • Geometry
  • Heterojunctions
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Military Research
  • Quantum Tunneling
  • Semiconductors
  • Two Dimensional
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene