Optoelectronic Devices Based on Novel Semiconductor Structures
Abstract
During the funding period, the group lead by Prof. Yujie J. Ding at Lehigh University and (formerly at Univ. of Arkansas) has investigated one class of the most important nonostructures; quantum-well dots. This class of the nanostructures serves as the first steps for eventually developing THz emitters and detectors that can be operated at room temperatures. For our effort on quantum-well dots, we have designed and grown InGaAs/GaAs quantum wells strained by InAs quantum dots. In order to compare the quantum-well dots with quantum dots, we have also grown InAs quantum dots on the top of GaAs layers. We have used photoluminescence spectrum as an effective technique to characterize these structures - We have found tat quantum-well dots have much narrower FL linewidths for all the pump intensities. Indeed, the linewidth for the quantum-well dots can be narrower by the amount as large as 25 meV. In addition, the intensity for the wavelength-integrated PL for the quantum-well dots is enhanced by a factor of about 2 or more.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 2002
- Accession Number
- ADA423352
Entities
People
- Yujie J. Ding
Organizations
- University of Arkansas