Defects in Ion-Implanted Silicon Carbide
Abstract
Defects that introduce electrically active deep levels in ion-implanted Silicon Carbide (SiC) were studied by performing capacitance Deep- Level Transient- Spectroscopy (DLTS) and transconductance frequency dispersion measurements on fully implanted MESFETs in bulk semi-insulating 4-H SiC, MISFETs in 6-H SiC and double implanted p-n and n-p junction diodes in 4-H SiC. The junction diodes made with aluminum and phosphoms implantations exhibited higher reverse leakage current compared to those made by nitrogen and boron implantations. In all samples implanted with nitrogen a defect complex involving nitrogen and a point defect (introduced by the ion-implantation process) is observed with a trap level introduced at 0.51 eV above the valence band. Phosphoms implant-native defect related peaks are observed at 0.6 and 0.7 eV above the valence band. In all boron implanted samples, a prominent electrically active boron related D-center defect is seen at 0.62 eV above the valence band. In aluminum implanted samples an intrinsic vacancy related defect is seen at 0.78 eV above the valence band. Surface state related defects were observed in the N-implanted channel region at energies 0.18 eV, 0.3 eV and 0.4 eV. Several defects were observed in the gate insulator and insulator/channel interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 2004
- Accession Number
- ADA424269
Entities
People
- Mulpuri V. Rao
Organizations
- George Mason University