Design and Test Evaluation of SiC Diode Modules

Abstract

Two high-temperature modules. one of p-i-n SiC diodes and one ofjunction barrier Schottky SiC diodes. were fabricated on AtN. Material choice, thermal conductivity, compatibility, design, and performance are discussed. A curve tracer measured each diode on a module for forward and reverse current versus voltage. Diodes in parallel were measured for reverse recovery charge and time, at different currents and to 150 deg C substrate, including operation in a DC-to-DC converter.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2004
Accession Number
ADA424306

Entities

People

  • M. G. Koebke
  • Timothy E. Griffin

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Circuit Boards
  • Compound Semiconductors
  • Electronics Industry
  • Electronics Laboratories
  • Energy
  • Heat Energy
  • High Temperature
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Test And Evaluation
  • Thermal Conductivity
  • Thyristors

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Semiconductor Device Technology
  • Software Engineering