Design and Analysis of a 15-kV Package for Wide Bandgap Semiconductor

Abstract

The development of wide bandgap semiconductor materials such as silicon carbide (SiC) has made possible devices that exceed the voltage ratings of conventional component packaging schemes. As such a new class of high voltage packages must be developed to realize the full potential of these technologies. We report on the electrostatic analysis and design of a t5-kV ceramic package using the ANSYS Multiphysics software. To baseline our work. a standard ceramic package was characterized and modeled for high voltage operation. With this information. a new package geometry was designed, and additional SiC die requirements were identified via finite element simulations.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2004
Accession Number
ADA424317

Entities

People

  • C. W. Tipton
  • Dimeji Ibitayo

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Dielectric Gases
  • Electric Fields
  • Elements
  • Geometry
  • High Voltage
  • Materials
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Simulations
  • Standards
  • Wide Bandgap Semiconductors

Fields of Study

  • Engineering

Readers

  • Computational Fluid Dynamics (CFD)
  • Electrical Engineering
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems