Fermi Electronics: A Means of Correlating and Canceling Shot Noise From Solid State Devices

Abstract

This project has developed a formalism for computing the shot noise in resonant- tunneling structures having an arbitrary number of quantum wells. It is based on the electrostatic feedback effect in quantum-well structures and is the first known shot noise formalism that treats the electrostatic and quantum effects in a self-consistent fashion. Simulation results are analyzed and compared to experimental results for an InGaAs/AlAs double-barrier structure, which is the fastest resonant tunneling diode ever characterized for its noise properties. Shot noise reduction and enhancement are predicted in the positive and negative differential resistance region, respectively, in satisfactory agreement with experiment. The shot noise reduction effect is then studied for multiple-well resonant tunneling diodes. It is found that in properly designed structures the shot noise factor

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Document Details

Document Type
Technical Report
Publication Date
Jun 08, 2004
Accession Number
ADA424326

Entities

People

  • Elliot R. Brown

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Computational Science
  • Electron Density
  • Electronics
  • Energy Bands
  • Heterojunctions
  • Noise Reduction
  • P-N Junction Diodes
  • Power Electronics
  • Quantum Tunneling
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Surface Plasmon Resonance
  • Tunnel Diodes

Fields of Study

  • Materials science
  • Physics

Readers

  • Acoustics.
  • Electrical Engineering
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing