Quantum Dot Intersubband Long-Wavelength Detector Arrays
Abstract
In(Ga,Al)As/(Ga,Al)As QDIPs are positioned to become an important technology in the field of IR detection, particularly for the type of high-temperature, low-cost, high-yield detector arrays required for the military and other highly sophisticated applications. This research has advanced the state-of-the-art in QDIP performance, demonstrating that it is reasonable to incorporate these devices into a FPA operating at 150 K for MWIR detection. For example, at this temperature of operation, J(sub dark)^10(exp -5) A/sq cm, R(sub peak) ^0.2 - 0.3 A/W and D* ^10 (exp 10) cm.Hz(exp 1/2/W. These improvements have been achieved by investigating several significant areas of QDIP operation to obtain a complete picture of the many different factors that affect detector performance: i) MBE growth of QDs for increased absorption of IR light, ii) design, fabrication, and characterization of state-of-the-art, discrete QDIPs operating at elevated temperatures, and iii) the characterization of small QDIP array properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 2004
- Accession Number
- ADA424327
Entities
People
- P. Bhattacharya
Organizations
- University of Michigan