Precursor Development for Aluminum Nitride Deposition

Abstract

This report results from a contract tasking Epichem Ltd as follows: The contractor, in close collaboration with the University of Liverpool, UK, Dr. Anthony C. Jones, will investigate the fundamental chemistry required to synthesize mono-amine adducts of aluminum trichloride and study the mechanism of Aluminum liberation from this synthesized adduct during Hydride Vapor Phase Epitaxy (HVPE) deposition. The goal of this research is to optimize and characterize aluminum trichloride for use in Aluminum Nitride production using HVPE. In addition to the research, four Aluminum Trichloride formulations will be synthesized and sent to AFRL/SNHC.

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Document Details

Document Type
Technical Report
Publication Date
Nov 12, 2003
Accession Number
ADA424817

Entities

People

  • Lesley M. Smith

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Aluminum
  • Aluminum Nitrides
  • Chemical Compounds
  • Chemical Vapor Deposition
  • Chemistry
  • Contracts
  • Elements
  • Epitaxial Growth
  • Materials
  • Nitrides
  • Nitrogen Compounds
  • Precursors
  • Scientific Research
  • Vapor Deposition
  • Wide Bandgap Semiconductors

Readers

  • Organic Chemistry
  • Research Science/Academic Research
  • Semiconductor Device Technology