Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes
Abstract
Planar n+ -p and p + -n junction diodes, fabricated in 411-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance deep-level transient spectroscopy (DLTS) to detect deep levels, which may influence device electrical performance. Either Al or B was used as the acceptor, while N or P was used as the donor, with all implants performed at 700 C and annealed at 1600-1650 C with an AlN protection cap. Different traps were observed for the various dopants, which are believed to be related to different impurity-defect complexes. A trap at ^Ev + 0.51 eV was observed in nitrogen-implanted samples, while an acceptor? trap at ^Ev+ 0.28eV and a donor trap at^Ec-0.42eV were observed in Al-implanted samples. A prominent boron-related D-center trap at ^Ev+ 0.63eV is seen in the DLTS spectra of B-implanted diodes. In diodes with implanted phosphorus, three traps at ^Ev+ 0.6eV, Ev+ 0.7eV, and Ev+ 0.92eV, are seen, which are not observed for implantations of other species.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2004
- Accession Number
- ADA424908
Entities
People
- K. A. Jones
- M. Derenge
- Mulpuri V. Rao
- N. Papanicolaou
- Souvick Mitra
Organizations
- George Mason University