Memowire: Polycrystalline Silicon Memory Effects
Abstract
This report results from a contract tasking Swiss Federal Inst. of Tech. Lausanne as follows: The contractor will study and report on materials and device information for the polysilicon memory project. Contractor to provide materials information on how polysilicon. silicon dioxide and the polysilicon/silicon dioxide interfaces behave under temperature and electric field stresses. Specific device information to be applicable to e-beam fabricated memory devices, the specific effect under study is the nature and origin of the hysteresis effect.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 13, 2004
- Accession Number
- ADA425052
Entities
People
- A. M. Ionescu
- D. Bouvet
- Serge Ecoffey