Metrology for the Sub-100 NM Domain Via Fiducial Grids
Abstract
The supported research applied interference lithography technology as a tool for metrology in the sub-100 nm (nanometer) critical dimension (CD) linewidth regime. To accomplish this goal MIT built a novel lithography tool called the Nanoruler. The tool uses the principle of scanning-beam interference lithography to pattern gratings with 400 nm period on 300-mm diameter wafers. MIT demonstrated a phase accuracy during writing and reading gratings with the Nanomler of 2.1 nanometers, 3 Sigma. This demonstrates that gratings can be uses as a dimensional metrology tool with accuracy exceeding laser interferometers. The accuracy of gratings written by the Nanoruler far exceed gratings patterned heretofore by other techniques, such as electron beam lithography or ruling A 300 mm-diameter wafer can be patterned in under 20 minutes with the Nanoruler, compared to hundreds of hours using electron-beam lithography to many weeks using diamond ruling.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 24, 2003
- Accession Number
- ADA425153
Entities
People
- Mark L. Schattenburg
Organizations
- Massachusetts Institute of Technology