Advancement of Polymer Detectors for Space Applications
Abstract
Photovoltaic polymer detectors incorporating Indium Phosphide (InP) and Cadmiume Selenide (CdSe) quantum dots (QDs) were fabricated, characterized for their open circuit voltage and short circuit currents and studied for radiation resistance. InP QD detectors exhibited higher photovoltages and responded further into the near-IR compared to CdSe QD detectors, however, the CdSe QD detectors exhibited higher external quantum efficiencies than InP QD detectors. InP QD detectors showed excellent resistance to gamma-ray and 25.6 MeV protons at a total dose of ^ 150 krad(si), while CdSe QD PPDs irradiated by gamma-rays to 152 krad (Si) damaged more from environmentally-induced aging effects than by ionization-induced processes. The data suggest that both InP and CdSe QD polymer detectors have excellent resistance to irradiation since strong carrier confinement and lifetimes inherent in QDs reduce the interaction with native defect and nuclear caused dislocations compared to conventional quantum well detectors where carriers have greater mobility and can interact freely with recombination centers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 16, 2004
- Accession Number
- ADA426246
Entities
People
- Edward W. Taylor
- Richard O. Claus
- Tingying Zeng