Investigation of Quantum Dot Lasers
Abstract
Since the first demonstration of room-temperature operation of self-assembled quantum dot (QD) lasers about a decade ago, there have been great strides in improving the characteristics and performance of these lasers. They currently match or surpass the performance of quantum well lasers. However, there are unique problems that limit the performance of conventional separate confinement heterostructure (SCH) QD lasers compared to what is expected from "ideal" lasers with near singular density of states. In the study reported here, unique insights and solutions to these problems are demonstrated and reliable quantum dot lasers that surpass quantum well lasers in performance characteristics are developed. By utilizing the concepts of tunnel injection and p-doping, 1.0 micrometer and 1.3 micrometer quantum dot lasers with high differential gain, modulation bandwidth ^25GHz, a factor less than unity, and zero chirp have been achieved. This final report summarizes the successful design, fabrication, and characterization of high performance 1.0 micrometer QD-Distributed-Feedback (DFB) lasers, 1.0 micrometer QD-Tunnel-Injection lasers (undoped and p-doped), and 1.3 micrometer p-doped QD lasers. The authors have demonstrated record performance of these unique devices in terms of differential gain, modulation bandwidth, temperature dependence, chirp, and linewidth enhancement factor. (16 figures, 14 refs.)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 09, 2004
- Accession Number
- ADA426456
Entities
People
- Pallab K. Bhattacharya
Organizations
- University of Michigan