Simulating Radiation-Induced Defects on Semiconductor Devices
Abstract
Exploring semiconductor lifetime, reliability and performance is a never-ending science for today's modern electronics. One significant problem that affects all of these areas is radiation-induced damage. Making calculations to determine how semiconductor devices will hold up in radiation-harsh environments has to be achieved in order to determine system lifetime once placed in their operational capacity. Today's high-technology investments in such areas as satellite design, medical advances, military and commercial hardware, demand thorough understanding in radiation damage. Modeling semiconductor devices with computer-based simulation will provide a cost and time savings over a repetitive design and testing sequence. This thesis models and simulates an industry standard solar cell and a light a light emitting diode (LED), using the SILVACO ATLAS(trade mark) computer-based program. Using this software, theses simulations are generated based on known radiation-induced defects on gallium arsenide (GaAs) semiconductive devices derived from Deep Level Transient Spectroscopy (DLTS) studies. A comparison is then made with another radiation-induced damage prediction method, known as Non-Ionizing Energy Loss (NIEL), to see if the SILVACO ATLAS(trade mark) models can be used as an alternative.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2004
- Accession Number
- ADA427182
Entities
People
- Dewey C. Gladney
Organizations
- Naval Postgraduate School