Synthesis and Characterization of Ge Nanocrystals for Thin-Film Applications

Abstract

The authors have developed a new route for the synthesis of alkyl terminated Germanium (Ge) nanoparticles. These nanoparticles are stable and uniform in size. This is an important first step for determining how to prepare a Ge film from Ge nanoparticles. Preliminary TEM indicates that the melting point of the Ge nanoparticles will be significantly lower than that of the bulk (937 degrees C). Once the melting point is known, the authors can experiment with polymeric substrates for the preparation of Ge films with the ultimate goal of producing flexible GaAs-based solar panels. These are expected to be lightweight, high power density solar panels that would be useful for space applications. (3 figures, 12 refs.)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 2004
Accession Number
ADA427972

Entities

People

  • Susan M. Kauzlarich

Organizations

  • University of California, Davis

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Analysis
  • Chemical Synthesis
  • Chemistry
  • Diffraction
  • Electron Microscopy
  • Films
  • High Temperature
  • Low Temperature
  • Materials
  • Materials Science
  • Melting Point
  • Microscopy
  • Nanoparticles
  • Particles
  • Solar Panels
  • Spectra
  • Thin Films

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Organic Chemistry

Technology Areas

  • Biotechnology
  • Space