Study of Optoelectronics Properties of Anisotropic Semiconductor Compounds with Ordered Stochiometric Vacancy
Abstract
This report results from a contract tasking loffe Institute as follows: The main aim of the project is to carry out basic research on optoelectronic properties of CdGeAs2 and (Zn,Cd,Hg)(Ga,Al,ln)2(S,Se,Te)4 materials and to supply samples of these materials to the US AFRL/ML. This research include measurements of X-ray diffraction as well as spectra of polarized first- and second-order Raman scattering by lattice vibrations photoconductivity. and photoluminescence measurements in a temperature range 77-300K mainly on the crystallographically oriented CdGeAs2 CdGa2S4 and HgGa2S4 single crystals - the most important representatives of these compounds. Results of these joint investigations will allow the research community to gain a new understanding of the crystalline structure and spectroscopic characteristics of the lattice perfection of these anisotropic group II-IV-V2 and II-III2-VI4 semiconductor compounds with ordered stochiometric vacancy. These materials will find uses as harmonic generators and tunable lasers in the infrared region of the spectrum.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2004
- Accession Number
- ADA428133
Entities
People
- Iouri Roud