A Novel Processing Technique for Growing Bulk Gallium Nitride Ingots From Gallium Melt
Abstract
In summary, a new process is being developed to obtain free standing, large area, near single crystal quality GaN flake (highly oriented GaN films) promising as native substrates for homoepitaxial growth of device quality, low-defect density GaN layers. However, the experiments to date resulted only in GaN flakes of sizes around 1 sq cm due to the following reasons: (a) the wetting and flow of molten Ga affected the flatness of the Ga film surfaces during the nucleation and coalescence of GaN crystals (b) the flow of Ga through cracks or discontinuities within the films limited the area of highly oriented GaN films. Currently, two types of experiments involving substrate stage rotation and in-Situ Ga delivery are being conducted to overcome the above difficulties. Similarly, MOCVD deposition studies onto GaN flakes are planned for making several mm thick ingots.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2004
- Accession Number
- ADA428486
Entities
People
- Hari Chandrasekaran
- Hongwei Li
- Mahendra K. Sunkara
- Sreeram Vaddiraju
Organizations
- University of Louisville