Devices Based on Silicon Carbide Alloyed with Germanium

Abstract

We produced the alloy and found the Ge is substitutional with no defects, is stable up to 1600 C, and has promising device proprieties.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2003
Accession Number
ADA428490

Entities

People

  • J. Kolodzey

Organizations

  • University of Delaware

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Carbides
  • Compound Semiconductors
  • Contracts
  • Elements
  • Germanium
  • Information Operations
  • Military Research
  • Monitoring
  • Silicon
  • Silicon Carbide