2.3 Micron High Power Continuous Wave Diode Laser Arrays

Abstract

Report developed under STTR contract for topic AFO3TO25 (2.3 Micron High Power Continuous Wave Diode Laser Arrays). This final technical report describes progress made to demonstrate the technical feasibility of high power GaSb based semiconductor laser arrays. These arrays have many potential applications includinq infrared countermeasures (IRCM), pumping of solid state lasers, low probability of intercept communication links, and trace gas analysis. Civilian applications exist in the fields of medical diagnostics and dermatological treatments. The research involved the fabrication and complete characterization of single emitter GaSb based devices. Successfbl results with the single emitter devices led to the demonstration, for the first time, of a one-dimensional 2.3 micr9n laser array. The array produced 10 watts in continuous wave operation, 18.5W in long pulse operation, and over 20W in short pulse operation (short pulse power limited by current source).

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 14, 2004
Accession Number
ADA428679

Entities

People

  • David Westerfeld

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Continuous Waves
  • Energy Bands
  • Heterojunctions
  • Infrared Countermeasures
  • Laser Arrays
  • Laser Diodes
  • Lasers
  • Optically Pumped Semiconductor Lasers
  • Optoelectronic Devices
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Slope
  • Solid State Lasers

Fields of Study

  • Physics

Readers

  • Gulf War Illness and Chronic Multisymptom Illness in Veterans.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics