Spectroscopy and Device Performance of Rare Earth Doped III-Nitrides
Abstract
The recent demonstration of visible thin-film electroluminescence (TFEL) devices based on rare earth doped GaN has spurred great interest in this class of materials for possible applications in full color displays. Prime candidates for redgreen- blue (RGB) emission are the rare earth ions Eu3+ (red), Er3+ (green), and Tm3+ (blue). A full-color TFEL phosphor system based on RE doped GaN has been demonstrated with high brightness (500-1000 cd/m2) under direct current operation of GaN: Er films on Si and sapphire substrates. The recent results on RE doped GaN have shown that these materials are promising for electroluminescent devices operating at room temperature. However, the initial results also indicated that more fundamental studies on the incorporation and excitation mechanisms of RE ions in III-nitrides are necessary to optimize their device performance. In this final report, spectroscopic results focusing on the infrared and visible emission from Er3+ in GaN are presented. The results include a comparison of the optical properties of in -situ Er doped GaN prepared by metalorganic MBE and solid-source MBE. In addition, detailed spectroscopic studies on Er doped GaN prepared by SSMBE as a function of excitation wavelengths, temperature, and pump power are discussed. Finally, initial result on the optical properties of Eu doped GaN are summarized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 12, 2002
- Accession Number
- ADA428892
Entities
People
- Uwe Hömmerich
Organizations
- Hampton University