A New Type of Silicon Superlattice: Hetero-Epilattice
Abstract
This paper introduces a new type of superlattice, consisting of a semiconductor such as silicon sandwiched between adsorbed oxygen atoms. Compared to heterojunction quantum structures, this type of superlattice allows a wider variety of man-made solid because of tolerance to interfacial strain. Experimentally, Si/O superlattice is epitaxial with defect density below 10(exp 9)/sq cm. A 9-period structure shows electroluminescence with a peak at 2.2eV, and an effective barrier height of more than 0.5eV. Early on in this project, HRTEM has been exclusively used to demonstrate the epitaxy beyond the monolayer of oxygen introduced. A year ago, superlattice structure in the strain pattern demonstrated the extent of the interfacial strain, being at least four lattice dimension. This is a very important finding because researchers may now use the Semiconductor-Atomic Superlattice (SAS) as a matching section for the epitaxial growth of one with large strain onto the other. A frequently asked question is as follows: Do the oxygen atoms cover the entire 1 x 2 site? If not, is there staggering present? Unfortunately, the answers to these questions may require in-situ STM probing, which may be something for future consideration. Technologically, this research opens the door for future 3D ICs. A list of 17 publications related to this research is included. (10 figures, 17 refs.)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 27, 2003
- Accession Number
- ADA429220
Entities
People
- Raphael Tsu
Organizations
- University of North Carolina at Charlotte