Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices
Abstract
This research was focused on four topics that are aimed at a better understanding of the physics and structural properties of quantum dots. The authors have demonstrated that the positioning and ordering of self-assembled InAs/GaAs quantum dots (QDs) are possible using a localized strain engineering of the growth surface. Using micro-photoluminescence (Micro-PL) they have demonstrated a novel way of generating charged exciton states in QDs. A detailed understanding of the recombination processes involved with the various charged states excitons states was obtained. Using QDs in microdisk, they have demonstrated single heralded photon emission from a self-assembled QD. By temperature tuning, they are able to shift the 1X exciton QD exciton into resonance with a whispering gallery mode of a microdisk and achieve turnstile of the coupled cavity-quantum dot system. The authors have shown that a QD is not only a source of correlated monochromatic photons, but it also is a source of multicolor photons with excitation-power-dependent correlation properties. This research on GaN QDs was aimed at developing the optimal growth conditions in the AlN/GaN system using molecular beam epitaxy (MBE). Optical spectroscopy of quantum dot ensembles was carried out and structures were developed to probe single GaN QDs using micro-photoluminescence. A list of 58 publications dated July 2000 to June 2003, 3 works in press, 12 oral presentations, 15 conference papers dated 2000-2003, and 4 patents is included as well as a cumulative list of 61 publications from July 2000 on. (5 figures)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2003
- Accession Number
- ADA429254
Entities
People
- Pierre M. Petroff
Organizations
- University of California, Santa Barbara