New Lanthanide Precursors for Doping Semiconductor Films
Abstract
The goal of this proposal was to synthesize new lanthanide and other source compounds for use in chemical vapor deposition and related processes using molecular precursors and to evaluate these compounds in materials growth processes. Specific objectives included the synthesis and characterization of lanthanide complexes that can be used to dope nitride and sulfide materials, materials growth using these precursors, and the synthesis and characterization of volatile, multimetallic first row transition metal complexes that can be used for as dopant precursors for magnetic semiconductor materials such as GaN:Mn or GaN:Cr. In addition, several new classes of potential film growth precursors for the group 2 elements magnesium, calcium, strontium, and barium were developed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 22, 2004
- Accession Number
- ADA429770
Entities
People
- Charles H Winter
Organizations
- Wayne State University