Systematic Studies of Carbon Doping in High Quality GaN Grown by Molecular Beam Epitaxy

Abstract

For the final contract period September 1, 2003 - December 31, 2004, we have completed the following tasks: * Sucessfully incorporated carbon into all MBE-grown HEMTs (in conjunction with the DARPA Wide Bandgap Semiconductor program) and realized record power non-field-plated GaN HEMTs (for both MBE and MOCVD. * In collaboration with Prof. Steve Ringel's group at Ohio State (under ONR support), completed an initial study of deep level optical studies of carbon-doped MBE GaN. Completed initial studies of Fe-doping in MBE GaN as an alternative approach for realizing semi-insulating GaN.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2004
Accession Number
ADA430009

Entities

People

  • James S. Speck

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Dislocations
  • Electrical Measurement
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Energy
  • Energy Levels
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Point Defects
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics