Modeling and Characterization of Dielectric-Charging Effects in RF MEMS Capacitive Switches

Abstract

For the first time, charging and discharging of traps in the dielectric of state-of-the art RF MEMS capacitive switches were characterized in detail. Densities and time constants of different trap species were extracted under different control voltages. It was found that, while charging and discharging time constants are relatively independent of control voltage, steady-state charge densities increase exponentially with control voltage. A simple charge model was constructed to predict the amount of charge injected into the dielectric and the corresponding shift in actuation voltage. Good agreement was obtained between the model prediction and experimental data.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2004
Accession Number
ADA430086

Entities

People

  • Charles L. Goldsmith
  • David Forehand
  • James C. M. Hwang
  • Xiaobin Yuan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Air Force
  • Air Force Research Laboratories
  • Charge Density
  • Contracts
  • Department Of Defense
  • Dielectric Permittivity
  • Electrodes
  • Electrons
  • Experimental Data
  • Exponential Functions
  • Government Procurement
  • Governments
  • Low Temperature
  • Microelectromechanical Systems
  • Military Research
  • Steady State

Readers

  • Electrical Engineering
  • Pulsed Power and Plasma Physics.
  • Robotics and Automation.