Demonstration of Silicon Carbide Power Devices in Practical Power Conversion Systems

Abstract

The goals of this project are: (1) to develop a design and processing sequence for high-power 4H-SiC bipolar junction transistors (BJTs) with blocking voltages above 1,000 V and on-state currents above 25 A; (2) to fabricate and package sufficient quantities of these devices to implement a demonstration motor control system; (3) to design and develop a prototype 40-100 kW motor control system for demonstrating the SiC BJTs; and (4) to operate the SiC BJTs in the prototype system as a real-world test of the feasibility of this technology for practical power conversion systems.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 12, 2005
Accession Number
ADA430136

Entities

People

  • C. Kwon
  • James A. Cooper Jr.
  • S. F. Glover
  • Scott D. Sudhoff

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Ceramic Materials
  • Control Systems
  • Converters
  • Current Density
  • Diagrams
  • Diodes
  • Fabrication
  • Frequency
  • Measurement
  • Metal-Semiconductor Junctions
  • Pin Diodes
  • Power Electronics
  • Power Supplies
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Aerospace Research.
  • Electrical Engineering
  • Systems Analysis and Design