A Novel InAs Quantum Wire System
Abstract
This article reports on a new technique in patterning high-quality, low-dimensional electrons in single InAs quantum wells. Grown by molecular beam epitaxy, the single InAs quantum well is sandwiched between AlSb barriers and capped by a thin layer of InAs. When the InAs cap layer is patterned by electron beam lithography and selectively removed, electrons are induced in the InAs quantum well below due to the different surface Fermi-level pinning voltages on the exposed AlSb layer from the InAs cap. One-dimensional quantum wires can thus be conveniently defined by lithography and nm-shallow etching. The authors demonstrate that these one-dimensional electrons possess a long elastic mean free path (> 1.4 micrometers) and a long coherence length (> 3 micrometers) at 2 K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2003
- Accession Number
- ADA430142
Entities
People
- Henry Yang
- James C. Culbertson
- K. A. Cheng
- M. J. Yang
Organizations
- University of Maryland