The Fabrication of Self-Assembled Quantum Dot Lasers of InGaAs on Si
Abstract
The authors have made significant progress both in the design and fabrication of Si-based laser device structures. They have demonstrated several key parts of the laser structure, including a SiGe waveguide with good optical and electrical properties for both light and carriers confinement. SiGe resonant cavity with Distributed Bragg Reflectors (DBRs) to serve as Si-based laser cavity was designed and fabricated, which may be the first SiGe-based resonant cavity with DBRs reported thus far. In addition, they have carried out theoretical calculations for coupled SAQD systems and formulated the distinct advantage of a coupled SAQD system for laser applications. In conjunction with ARO program DAAD19-01-1-0532, the authors have achieved good control over and the mapping of the parameter space for fabricating InAs quantum dots on Si substrate. They also have carried out detailed transmission electron microscopy (TEM) studies of individual dots and experimentally identified the critical dot size for dislocation under different growth conditions. The very small critical size of InAs SAQD for dislocation and the associated extreme quantum confinement show that there might not be a window in the dot size for which electron-hole pairs can be confined and the dots are coherently strained. Information is presented on the following topics: laser cavity fabrication and measurement; SiGe waveguide design and fabrication; distributed Bragg reflector (DBR) laser cavities; coupling effect on the laser performance; III-V quantum dots on Si(001); fabrication of InAs SAQDs on Si(001); growth mode of III-V on IV substrate; first-principles calculations of different InAs overlayers on Si(001); critical size of threading dislocation-free dots at different growth conditions; InAs growth on relaxed SiGe buffer layer; and high-resolution transmission electron microscopy study of InAs on Si(001).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2004
- Accession Number
- ADA430209
Entities
People
- Bin Shi
- Hyung J Kim
- Jian Liu
- Ya-Hong Xie
- Zuo M. Zhao
Organizations
- University of California, Los Angeles