Investigation of Structural and Electrical Defects in GaN/AlGaN Structures and MODFETs
Abstract
In this project, main goal was to focus on MODFET structures to understand the sources of improvements and the sources of degradations. In order to reach one of the objectives, the GaN templates grown by MOCVD was followed by c-beam evaporation of Ti layer. By the means of in-situ nitridation in hydrogen and ammonia environment inside the MOCVD system this Ti layer was converted into an effective nano-network of TiN with high density of voids and nano-porous GaN islands. Those nano-porous GaN templates were used as a template for nano-LEO epitaxy for GaN growth. It has recently been reported the growth of thick GaN and subsequent separation from sapphire substrate by a void-assisted separation (VAS) technique. which utilizes a thin TiN porous network at the beginning of hydride vapor phase epitaxy (HVPE) growth.' They obtained a very low TD density of 5x10(exp 6)/ cm ^ for the 300-^ micronmeter GaN layer on the TiN interlayer, as was reported by HVPE growth earlier in such GaN templates without a TiN network. It is, therefore, interesting to determine the role of a TiN network on dislocation reduction in thinner GaN films. In this paper, we report the growth and characterization of GaN grown on in situ TiN porous network by MOCVD with reduced dislocation density and therefore improved optical and crystalline properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2004
- Accession Number
- ADA431005
Entities
People
- Hadis H. Morkoç̌
Organizations
- Virginia Commonwealth University