Device Measurement and Modeling System for Electronic Terahertz Sensing
Abstract
This proposal was for acquisition of an advanced semiconductor device modeling system to characterize transistors, diodes and passive element from 45 MHz to at least 110 GHz to enable design and development of advanced electronic terahertz sensing systems based on both silicon and gallium-arsenide materials. The need for such systems is becoming increasingly urgent since sophisticated weapons and explosives require increasingly sophisticated detection technologies. Non-metallic varieties of these threats are especially important because they elude familiar metal-detecting portals. We have demonstrated in recent and comprehensive single-pixel studies that threats like these are readily detectable and even identifiable using broadband-pulsed signals in the microwave and millimeter- wave regime (1-1000 GHz). While traditional equipment for generating and detecting these frequencies has been hard to use, bulky and expensive, our unique all-electronic and monolithically integrated technology for generating and detecting these signals can now be applied to broadband spectroscopic imaging, detecting the reflection spectra of plastic weapons and explosives on human subjects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2003
- Accession Number
- ADA431028
Entities
People
- D. W. Van Der Weide
Organizations
- University of Wisconsin–Madison